Shumpei YAMAZAKI, Kunihiko WADA and Ichiro TANIGUCHI

The application of catalysts to chemical vapor deposition process to activate reactive species is shown effective in improving electrical properties of Si‐Si₃N₄ systems. NFB  of the Si‐Si₃N₄ system prepared by the catalytic method is about one tenth of NFB of those prepared by the conventional method.　 The catalysts of NiO and Pt are applied to the ammonia and silane respectively.　The catalysis seems to be effective to reduce the deposition temperature by about　100℃．　The density of the interface states is about 1×10¹¹ cm^‐2 and the peak energy levels of donor and　acceptor　states are 0.43eV　and -0.47eV respectively. Injection type hysteresis loops are always observed in　the in‐version region of both p- and n-type samples at a low temperature. The hysteresis is proportional to the film thickness and is independent of the preliminary treatments.