History


1980 - 1990
1980 Semiconductor Energy Laboratory Co., Ltd. was founded in Setagaya, Tokyo
1982 Achieved a photoelectric conversion efficiency of 8.01%/AM1(100mW/cm2) in an NIP amorphous solar cell formed with a stainless steel substrate and set a new world record
1984 Succeeded in developing the solar battery by a laser scribing method for the first time in the world
Achieved an average photoelectric conversion efficiency of 8.67% and a peak of 9.41%, in PIN amorphous solar cell made with 100cm2 glass substrate, the highest in the world

Began production and sales of a photo CVD apparatus

Photo CVD apparatus hν-2

■ Photo CVD apparatus hν-2

1985 Increased capital to 50 million yen
Achieved a photoelectric conversion efficiency of 9.90% (100cm2) for PIN amorphous solar cell on glass substrate, and set a new world record

Moved the head office and laboratory to Atsugi, Kanagawa

Company building after moving to Atsugi ■ Company building after moving to Atsugi
1986

Developed the world’s first diamond deposition apparatus, and began sales

Diamond deposition apparatus μH-2■ Diamond deposition apparatus μH-2
1987

Participated in the 1st World Solar Challenge, a solar powered car race in Australia

solar-car■ Solor car
1989 Made a capital participation in Giant Technology Corporation (GTC), a project established by the Ministry of International Trade and Industry of Japan
1990 Increased capital to 480 million yen
Participated in the 2nd World Solar Challenge, a solar powered car race in Australia
Achieved a photoelectric conversion efficiency of 12.29% (1.05cm2) for PIN amorphous solar cell on glass substrate, and set a new world record
Ranked 3rd for the number of U.S. patents in the Superconductor category
1991 - 1995
1991 Achieved a photoelectric conversion efficiency of 12.65% (1.05 cm2), and set a new world record
Achieved a polycrystalline TFT with a mobility of 329cm2/Vsec, a world record
1992

Completion of a linear laser crystallization system, LS-6

Linear laser crystallization system LS-6■ Linear laser crystallization system LS-6
1993 Made a facility investment for trial fabrication of thin-film integrated circuits
Merchandised a flexible solar cell by TDK Corporation
1995 Announced the world’s first active-type organic EL (Electroluminescent) panel from TDK Corporation
1996 - 2000
1998

Announced the world’s first CGS® (Continuous Grain boundary crystal Silicon) technology with Sharp Corporation

CGS(dark brown: amorphous state/light brown: crystalline state)

■ CGS(dark brown: amorphous state/light brown: crystalline state)


CGS TFT liquid crystal panel (1280×1024pixels)

■ CGS TFT® liquid crystal panel (1280×1024pixels)

2000 Presented Active-type Organic EL at CEATEC JAPAN
2001 - 2005
2001 Co-founded a joint venture company ELDis, Inc. for the purpose of mass production and sales of TFT substrates for organic EL panels, with Tohoku Pioneer Corporation and Sharp Corporation
2002

Announced the technology of forming CPU on a glass substrate with Sharp Corporation

CPU on a glass substrate■ CPU on a glass substrate
Sharp Corporation began mass production of CG silicon
2003 Increased capital to 4,348 million yen
Built IP Center
Exhibited Dual Emission Organic EL panel at a joint booth in the 13th FPD Manufacturing Technology Expo & Conference (FINETECH JAPAN)
Developed 4.3-inch VGA Organic EL panel with the world’s highest density of 188ppi (260,000 colors)
2004 Succeeded in forming and driving CPU on a plastic substrate for the first time in the world

■CPU on a plastic substrate
Developed and announced a 1.5-inch QXGA Organic EL panel with the world's highest pixel density of 423 ppi (aperture ratio: 75 %)
2005 Succeeded in developing and driving a flexible RF circuit
Announced the achievement of successfully forming RFCPU on flexible substrate and glass substrate at the IEEE International Electron Devices Meeting (IEDM)
2006 - 2010
2006 Founded Advanced Film Device Inc., a wholly-owned subsidiary
2007 Announced success in the world’s first operation with communication signals in UHF band (915 MHz) at International Solid State Circuits Conference (ISSCC)

■RFCPU®
Obtained certification of International Standard, ISO/IEC27001
Exhibited Ultrathin Flexible RFID Tags in collaboration with TDK Corporation at CEATEC JAPAN 2007
2008 Exhibited Flexible RFID in collaboration with Advanced Film Device Inc. at Cartes & Indentification
2009 Presented Oxide Semiconductor (OS) TFT at SID 2009
Received Best Paper Award for Presentation of Oxide Semiconductor (OS) TFT at AM-FPD’09
2010 SID 2010 Presentations
Oxide Semiconductor (OS): 5 papers
Organic EL Lighting: 2 papers
Obtained certification of International Standard, ISO9001
2011 - 2015
2011

Received Best Poster Award for presentation of Oxide Semiconductor (OS) TFT at ECI Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors III

2012 Announced a new technology, C-Axis Aligned Crystal (CAAC®), of oxide semiconductor co-developed with Sharp Corporation
Announced a CPU incorporating a nonvolatile memory, which does not deteriorate in principle
Exhibited prototypes of display panels and non-display application using CAAC-OS® at FPD International 2012 (co-presented with Sharp Corporation)
Began distribution of smartphones using CAAC-OS through Sharp Corporation
2013 Received Gold Award in Display of the Year at SID 2013, “LCD using oxide semiconductor IGZO, incorporated in smartphones manufactured by Sharp Corporation” (co-recipient with Sharp Corp.)
Received Paper Award for presenting CPU using CAAC-OS at SSDM 2013
Exhibited displays at FPD International 2013 and received Outstanding Achievement Prize for “Flexible display, lighting and battery using oxide semiconductor”

■Wearable Device Incorporating Flexible Battery
exhibited at FPD International 2013
Received Minister of Economy, Trade and Industry Prize of the 27th Chunichi Industrial Technology Awards, “Mass production LCD panels “IGZO” using oxide semiconductor” (co-recipient with Sharp Corp.)
2014 Received SID Distinguished Paper Award for the presentation of OLED Display Using CAAC-OS FETs at SID 2014
Received Display Innovation Award, Grand Prize for Ultra High-Definition and Ultra Thin Flexible Organic Display exhibited at Display Innovation 2014

■8.7-Inch Tri-fold Display with Touch Panel Sensor
exhibited at Display Innovation 2014
2015 Exhibited a 13.3-Inch 8K OLED display at IBC Content Everywhere MENA 2015 and at other exhibition venues in collaboration with NHK (Japan Broadcasting Corporation)

■13.3-Inch 8K OLED display
Received SID’s Special Recognition Award for President Yamazaki's contributions to the discovery of CAAC-IGZO®
Received SID’s Distinguished Paper Award for the paper on "Apparatus for Manufacturing Flexible OLED Displays" and for the paper on "New Pixel Circuits Using OS-FET" presented at SID 2015
2016 -
2016 Received ACerS Corporate Technical Achievement Award for the discovery of CAAC-IGZO and its development for application products (co-recipient, Sharp Corporation)
President Yamazaki received ACerS Medal for Leadership in the Advancement of Ceramic Technology for his outstanding contributions to oxide semiconductor technology and energy-saving display devices
2017 President Yamazaki published three jointly edited books on crystalline oxide semiconductor CAAC-IGZO® from John Wiley & Sons, Inc.
Exhibited at AI World Conference & Expo, and President Yamazaki made a keynote speech "Power Consumption: Roadblock for AI Moving Forward"

*CGS, CGS TFT, RFCPU, CAAC, CAAC-OS, and CAAC-IGZO are registered trademarks of Semiconductor Energy Laboratory Co., Ltd.
(Japanese trademark registration No. 4335464, No. 4480969, No. 4963906, No. 5473530, No. 5473535, and No. 5494218).