Silicon Nitride Prepared by the SiH4-NH3 Reaction with Catalysts
Shumpei YAMAZAKI, Kunihiko WADA and Ichiro TANIGUCHI
The application of catalysts to chemical vapor deposition process to activate reactive species is shown effective in improving electrical properties of Si‐Si3N4 systems.
NFB of the Si‐Si3N4 system prepared by the catalytic method is about one tenth of NFB of those prepared by the conventional method. The catalysts of NiO and Pt are applied to the ammonia and silane respectively. The catalysis seems to be effective to reduce the deposition temperature by about 100℃. The density of the interface states is about
1×1011cm‐2 and the peak energy levels of donor and acceptor states are 0.43eV and -0.47eV respectively.
Injection type hysteresis loops are always observed in the inversion region of both p- and n-type samples at a low temperature.
The hysteresis is proportional to the film thickness and is independent of the preliminary treatments.
『1970年 Japanese Journal of Applied Physics. より抜粋』