CAAC-OS® Technology

SEL discovered a crystal structure with c-axis alignment in a direction perpendicular to the film surface and without alignment in the a-b plane (CAAC), in a crystalline IGZO thin film formed at temperatures lower than 300℃. This is a completely novel crystal structure that differs from single crystals, which do not have distortions, as well as from polycrystals, which have clear grain boundaries.

SEL has succeeded in fabricating miniaturized CAAC-IGZO FETs applicable to ultra LSI, with a channel length and width of 30 nm each. We will continue to take on the challenge of developing new devices using CAAC-OS.

IGZO Crystal Structure (3D Molecular Model)
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Extremely Low Off-State Current of CAAC-IGZO FET